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dc.contributor.author林冠佑zh_TW
dc.contributor.author鄭晃忠zh_TW
dc.contributor.authorLin, Kuan-Yuen_US
dc.contributor.authorCheng, Huang-Chungen_US
dc.date.accessioned2018-01-24T07:37:53Z-
dc.date.available2018-01-24T07:37:53Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350126en_US
dc.identifier.urihttp://hdl.handle.net/11536/139312-
dc.language.isoen_USen_US
dc.subject電阻式記憶體zh_TW
dc.subject爐管退火zh_TW
dc.subject快速金屬退火zh_TW
dc.subject氧化鉿zh_TW
dc.subject電場增強效應zh_TW
dc.subject低操作電壓zh_TW
dc.subjectRRAMen_US
dc.subjectFurnace annealingen_US
dc.subjectRapid thermal annealingen_US
dc.subjectHafnium oxideen_US
dc.subjectField-enhanced effecten_US
dc.subjectLow operation voltagesen_US
dc.title氧化鉿電阻式記憶體特性之研究zh_TW
dc.titleStudy on the Resistive Switching Characteristics of the Hafnium Oxide-Based Resistive Random Access Memory (RRAM) Devicesen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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