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dc.contributor.authorVoskoboynikov, Oen_US
dc.contributor.authorDyankov, Gen_US
dc.contributor.authorWijers, CMJen_US
dc.date.accessioned2014-12-08T15:19:37Z-
dc.date.available2014-12-08T15:19:37Z-
dc.date.issued2005-03-01en_US
dc.identifier.issn0026-2692en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.mejo.2005.02.070en_US
dc.identifier.urihttp://hdl.handle.net/11536/13951-
dc.description.abstractThe purpose of this paper is to show that semiconductor nano-structures built from non-magnetic InAs/GaAs nano-rings can exhibit simultaneously negative effective permittivity and permeability over a certain optical frequency range. The structures are resonant and have this property near the edge of absorption of the nano-rings. This can be particularly interesting in the investigation of the challenging problem of development of left-handed composite materials in the optical range. (c) 2005 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectleft-handed materialen_US
dc.subjectsemiconductor nano-ringsen_US
dc.subjectopticsen_US
dc.titleLeft handed composite materials in the optical rangeen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.mejo.2005.02.070en_US
dc.identifier.journalMICROELECTRONICS JOURNALen_US
dc.citation.volume36en_US
dc.citation.issue3-6en_US
dc.citation.spage564en_US
dc.citation.epage566en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000229666000107-
Appears in Collections:Conferences Paper


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