完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Voskoboynikov, O | en_US |
dc.contributor.author | Dyankov, G | en_US |
dc.contributor.author | Wijers, CMJ | en_US |
dc.date.accessioned | 2014-12-08T15:19:37Z | - |
dc.date.available | 2014-12-08T15:19:37Z | - |
dc.date.issued | 2005-03-01 | en_US |
dc.identifier.issn | 0026-2692 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.mejo.2005.02.070 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/13951 | - |
dc.description.abstract | The purpose of this paper is to show that semiconductor nano-structures built from non-magnetic InAs/GaAs nano-rings can exhibit simultaneously negative effective permittivity and permeability over a certain optical frequency range. The structures are resonant and have this property near the edge of absorption of the nano-rings. This can be particularly interesting in the investigation of the challenging problem of development of left-handed composite materials in the optical range. (c) 2005 Elsevier Ltd. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | left-handed material | en_US |
dc.subject | semiconductor nano-rings | en_US |
dc.subject | optics | en_US |
dc.title | Left handed composite materials in the optical range | en_US |
dc.type | Article; Proceedings Paper | en_US |
dc.identifier.doi | 10.1016/j.mejo.2005.02.070 | en_US |
dc.identifier.journal | MICROELECTRONICS JOURNAL | en_US |
dc.citation.volume | 36 | en_US |
dc.citation.issue | 3-6 | en_US |
dc.citation.spage | 564 | en_US |
dc.citation.epage | 566 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000229666000107 | - |
顯示於類別: | 會議論文 |