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dc.contributor.author錢俊霖zh_TW
dc.contributor.author溫瓌岸zh_TW
dc.contributor.authorChien, Chun-Linen_US
dc.contributor.authorWen, Kuei-Annen_US
dc.date.accessioned2018-01-24T07:38:09Z-
dc.date.available2018-01-24T07:38:09Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070350269en_US
dc.identifier.urihttp://hdl.handle.net/11536/139588-
dc.description.abstract本論文提出可於標準1P6M 0.18μm電路製程下,完成單軸角速度及加速度之感測結構,並將讀出電路整合於同一晶片上。利用兩個反向振盪質量塊所產生之位移訊號計算出角速度及加速度。此外本結構加入非耦合環之設計以降低驅動模態與感測模態之耦合現象。 讀出電路之功率消耗為0.79mW。經由MEMS模擬軟體CoventorWare建立等效模組,並且利用Verilog-A模組轉換至Cadence電路模擬軟體進行同步模擬。陀螺儀與加速度靈敏度模擬結果為10.48mV/o/sec,陀螺儀感測範圍為±50/o/sec。整顆晶片的面積為2.5mm2。 陀螺儀量測結果如下,在一大氣壓力下,其驅動模態與感測模態之共振頻率分別為6.5kHz以及7kHz,品質參數為100.1與10。感測模態之最大翹曲為1.07μm,因此梳狀電容重疊部份為90.3個百分點。zh_TW
dc.description.abstractA combo design of gyroscope-accelerometer in the sole structure based on standard 0.18 μm 1-poly-6-metal CMOS-MEMS process and monolithically integrated with readout circuit have been proposed. We put forward an idea to calculate the angular rate and the external acceleration by dual proof mass structures. A decouple ring was used to reduce the cross-coupled of sensing mode and driving mode. The system power dissipation is 0.79mW. The MEMS structure behavior parameters can be simulated in CoventorWare, which is simulation software for MEMS, and using Verilog-A model simulating with CMOS circuit in Cadence SpectreRF. The sensitivity of gyroscope is 10.48mV/°/sec and the sensing range is ±50/°/sec. The total area is 2.5mm2. The measured driving and sensing frequencies were 6.5kHz and 7kHz and the Q factor were 100.4 and 10 in the air. The curl of sensing comb finger is 1.07μm it means the overlap is more than 90.3%.en_US
dc.language.isoen_USen_US
dc.subject微機電系統zh_TW
dc.subject陀螺儀zh_TW
dc.subject加速度計zh_TW
dc.subject讀出電路zh_TW
dc.subjectCMOS-MEMSen_US
dc.subjectGyroscopeen_US
dc.subjectAccelerometeren_US
dc.subjectReadout circuiten_US
dc.title單軸陀螺儀與加速度計共通結構與整合電路設計zh_TW
dc.titleCombo design of gyroscope-accelerometer with Integrated Readout Circuit on Standard 0.18um 1P6M CMOS Technologyen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis