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第 1 到 10 筆結果，共 33 筆。

符合的文件：
公開日期標題作者
1-五月-2010Transition mechanism of InAs/GaAs quantum-dot infrared photodetectors with different InAs coveragesTseng, Chi-Che; Chung, Tung-Hsun; Mai, Shu-Cheng; Chao, Kuang-Ping; Lin, Wei-Hsun; Lin, Shih-Yen; Wu, Meng-Chyi; 光電工程學系; Department of Photonics
1-四月-2007Photoluminescence characterization of type-II Zn0.97Mn0.03Se/ZnSe0.92Te0.08 multiple-quantum-well structuresShiu, Jian-Jhin; Chen, Wei-Li; Lin, Der-Yuh; Yang, Chu-Shou; Chou, Wu-Ching; 電子物理學系; Department of Electrophysics
15-二月-2008Thermally evaporated In2O3 nanoloquats with oxygen flow-dependent optical emissionsChu, Chia-Pu; Ko, Tsung-Shine; Chang, Yu-Cheng; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
25-一月-2006Quaternary AlInGaN multiple quantum well 368 nm light-emitting diodeWang, TC; Kuo, HC; Lee, ZH; Chuo, CC; Tsai, MY; Tsai, CE; Lee, TD; Lu, TC; Chi, J; 光電工程學系; Department of Photonics
1-八月-2010Morphology and optical properties of single- and multi-layer InAs quantum dotsHsu, Chiung-Chih; Hsu, Ray-Quen; Wu, Yue-Han; 機械工程學系; 材料科學與工程學系; Department of Mechanical Engineering; Department of Materials Science and Engineering
1-十二月-1998Magneto-luminescence of quasi-zero dimensional In0.25Ga0.75As/GaAs quantum dotsCheng, HH; Nicholas, RJ; Priest, A; Tsai, FY; Lee, CP; Sanchez-Dehesa, J; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2008Tunable light emissions from thermally evaporated In2O3 nanostructures grown at different growth temperaturesKo, Tsung-Shine; Chu, Chia-Pu; Chen, Jun-Rong; Lu, Tien-Chang; Kuo, Hao-Chung; Wang, Shing-Chung; 光電工程學系; Department of Photonics
22-五月-2001Investigation of beryllium implanted P-type GaNYu, CC; Chu, CF; Tsai, JY; Wang, SC; 光電工程學系; Department of Photonics
1-三月-1997Investigation of the indium atom interdiffusion on the growth of GaN/InGaN heterostructuresTsang, JS; Guo, JD; Chan, SH; Feng, MS; Chang, CY; 交大名義發表; National Chiao Tung University
15-二月-1997Local electric field effects in a SiGe quantum well investigated by photoluminescenceNilsson, S; Penner, U; Schmalz, K; Yassievich, IN; Chang, CY; Tsai, WC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics

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