Investigation of beryllium implanted P-type GaN

Abstract

We report the preliminary results of beryllium implanted into P-type GaN and the effects on the characteristic of Mg-doped P-GaN. These samples were implanted with Be ions were implanted with two different energies of 50 and 150 keV at two different doses of similar to 10(13) and 10(14) cm(-2) at room temperature. Surface morphology and photoluminescence measurements are presented. (C) 2001 Elsevier Science B.V. All rights reserved.