標題: | Beryllium-implanted P-type GaN with high carrier concentration |
作者: | Yu, CC Chu, CF Tsai, JY Lin, CF Lan, WH Chiang, CI Wang, SC 光電工程學系 Department of Photonics |
關鍵字: | beryllium;implantation;GaN;MOCVD |
公開日期: | 1-五月-2001 |
摘要: | We report the results of beryllium implantation in Mg-doped GaN to obtain a high hole concentration and lower activation energy for Mg. The metal organic chemical vapor deposition (MOCVD)-grown Mg-doped GaN samples were implanted with Be ions at two different energies of 50 keV and 150 keV and a dose of 10(14) cm(-2). The implemented samples were subsequently annealed at 1100 degreesC for 60 s. The annealed samples showed an increase of hole concentration by three orders of magnitude from the non-implanted value of 5.5 x 10(16) to 8.1 x 10(19) cm(-3) as determined by Hall measurement. The activation energy of Mg dopants for the implanted annealed samples estimated from the temperature dependence of the photoluminescence data is about 170 meV, which is nearly 30% lower than that for the as-grown samples. |
URI: | http://dx.doi.org/10.1143/JJAP.40.L417 http://hdl.handle.net/11536/29670 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.40.L417 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 40 |
Issue: | 5A |
起始頁: | L417 |
結束頁: | L419 |
顯示於類別: | 期刊論文 |