Title: | 經電荷調變之能帶對氮化鎵金屬絕緣層半導體高電子遷移率電晶體元件特性影響之研究 Study of Device Performance with Charge-induced Energy Band Modulation in GaN MIS-HEMTs |
Authors: | 黃崇愷 張翼 施敏 Huang, Chung-Kai Chang, Edward Yi Sze, Simon Min 電子研究所 |
Keywords: | 氮化鎵;金屬絕緣層半導體高電子遷移率電晶體;氮氧化矽;鐵電材料;能帶調變;GaN;MIS-HEMT;SiON;Ferroelectric;Energy Band Modulation |
Issue Date: | 2016 |
URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070250112 http://hdl.handle.net/11536/140026 |
Appears in Collections: | Thesis |