Title: 經電荷調變之能帶對氮化鎵金屬絕緣層半導體高電子遷移率電晶體元件特性影響之研究
Study of Device Performance with Charge-induced Energy Band Modulation in GaN MIS-HEMTs
Authors: 黃崇愷
張翼
施敏
Huang, Chung-Kai
Chang, Edward Yi
Sze, Simon Min
電子研究所
Keywords: 氮化鎵;金屬絕緣層半導體高電子遷移率電晶體;氮氧化矽;鐵電材料;能帶調變;GaN;MIS-HEMT;SiON;Ferroelectric;Energy Band Modulation
Issue Date: 2016
URI: http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070250112
http://hdl.handle.net/11536/140026
Appears in Collections:Thesis