[6,6]-苯基碳六十一丁酸甲酯摻雜離子性聚芴作為電子傳輸層以提升平面異質接面鈣鈦礦 太陽能電池表現

Abstract

本研究介紹新穎n型摻雜的[6,6]-苯基碳六十丁酸甲酯(PC61BM)以提升其載子傳遞能力並用於改善反結構鈣鈦礦太陽能元件之效率。含有三甲基銨六氟磷酸根團基之離子化聚芴衍生物，取名為P1-PF6，摻雜於PC61BM中做為電子傳輸層。引入P1-PF6減少PC61BM的堆積並改善電子傳輸層與上電極之接觸接面。此外，拉電子團基六氟磷酸鹽可協助PC61BM以增加電子傳遞及萃取之能力。本研究將製作結構為 ITO/PEDOT:PSS/CH3NH3PbI3/pure or doped PC61BM/Ag之反結構鈣鈦礦元件並收集相關參數。最佳化元件採PC61BM作為電子傳輸層其效率表現VOC、JSC、FF、及PCE分別為1.02 V、15.68 mA/cm2、66.7%及10.67%； 然而，採用n型摻雜的PC61BM作為電子傳輸層其效率表現在JSC (17.32 mA/cm2)、PCE (12.55%)有明顯提升。元件相關參數將被記錄且統整，並使用多項儀器包含掃描式電子顯微鏡、原子力顯微鏡、紫外光光電電子能譜儀及螢光萃熄來探討摻雜後對於苯基碳六十丁酸甲酯的影響。

In this research, we demonstrate a novel n-doped [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) layer with optimized charge transport to improve device performance of inverted planar heterojunction perovskite solar cells (PSCs). An ionic polyfluorene derivative containing trimethylammonium hexafluorophosphate (PF6–) groups, namely P1-PF6, was doped into PC61BM as the electron transporting layer (ETL). The incorporation of P1-PF6 reduces the aggregation of PC61BM and improves interfacial contact between the ETL and top electrode. Besides, the electron-withdrawing PF6– groups help to increase electron transporting and extraction ability of PC61BM. Inverted PSCs with the configuration of indium tin oxide (ITO)/PEDOT:PSS/CH3NH3PbI3/pure or doped PC61BM/Ag were fabricated and evaluated. The optimized device using pure PC61BM exhibited a VOC of 1.02 V, a JSC of 15.68 mA/cm2, a FF of 66.7%, and a PCE of 10.67%, While using n-doped PC61BM as ETL, the device performance was enhanced, especially JSC (17.32 mA/cm2) and PCE (12.55%). The device parameters were collected and summarized. Miscellaneous techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), ultraviolet photoelectron spectroscopy (UPS), four-probe electrical measurement, and photoluminescence (PL) quenching experiments were carried out to investigate the effect of P1-PF6 in doped PC61BM films.