完整後設資料紀錄
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dc.contributor.author黃政倫zh_TW
dc.contributor.author楊勝雄zh_TW
dc.contributor.authorHuang, Zheng-Lunen_US
dc.contributor.authorYang, Sheng-Hsiungen_US
dc.date.accessioned2018-01-24T07:39:00Z-
dc.date.available2018-01-24T07:39:00Z-
dc.date.issued2016en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070358101en_US
dc.identifier.urihttp://hdl.handle.net/11536/140201-
dc.description.abstract本研究利用水熱法並首次以Al(NO3)3·9H2O作為鋁來源引入氧化鋅奈米柱晶格內以修飾氧化鋅奈米柱本質特性,並製作成鈣鈦礦太陽能電池。鋁摻雜氧化鋅奈米柱之X-ray繞射圖顯示其(002)晶格平面具有較大的2θ值和較強的繞射強度。也觀察到鋁摻雜氧化鋅奈米柱相對於未摻雜氧化鋅奈米柱具有較大的光學能隙和較高的電導率。穩態螢光光譜顯示在鋁摻雜氧化鋅奈米柱與鈣鈦礦層之接面具備有效的載子萃取與收集行為。經過優化之鋁摻雜氧化鋅奈米柱元件之開路電壓為0.84 V,短路電流密度為21.93 mA/cm2,填充因子為57%,功率轉換效率為10.45%,相較於未摻雜氧化鋅奈米柱元件高出23%。zh_TW
dc.description.abstractIn this study, we first incorporated Al(NO3)3·9H2O as the Al source into ZnO nanorods (NRs) lattice via the hydrothermal method to modify nature properties of ZnO NRs for the fabrication of perovskite solar cells (PSCs). The X-ray diffraction (XRD) pattern of Al-doped ZnO NRs exhibits higher 2θ values and stronger intensity of (002) plane. Larger optical band gap and higher electrical conductivity of Al-doped ZnO NRs are also observed relative to non-doped ZnO ones. The steady-state photoluminescence shows effective charge extraction and collection at the interface between Al-doped ZnO NRs and perovskite layer. The optimized device based on Al-doped ZnO NRs showed an open-circuit voltage of 0.84 V, a short-circuit current density of 21.93 mA/cm2, a fill factor of 57%, and a power conversion efficiency of 10.45% that was 23% higher than the non-doped ZnO ones.en_US
dc.language.isozh_TWen_US
dc.subject氧化鋅奈米柱zh_TW
dc.subject水熱法zh_TW
dc.subject鈣鈦礦太陽能電池zh_TW
dc.subject鋁摻雜zh_TW
dc.subject電荷萃取zh_TW
dc.subjectZnO nanorodsen_US
dc.subjectHydrothermal methoden_US
dc.subjectPerovskite solar cellsen_US
dc.subjectAl-dopeden_US
dc.subjectCharge extractionen_US
dc.title以鋁摻雜氧化鋅奈米柱作為電子傳輸層提升正型結構鈣鈦礦太陽能電池之效率zh_TW
dc.titleEfficiency Enhancement of Regular-type Perovskite Solar Cells Based on Al-doped ZnO Nanorods as Electron Transporting Layersen_US
dc.typeThesisen_US
dc.contributor.department照明與能源光電研究所zh_TW
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