於高頻高功率應用的氮化鋁鎵/氮化鎵高電子遷移率電晶體大訊號模型建立

Abstract

氮化鎵高電子遷移率電晶體具有高轉導、高截止頻率與良好的熱傳導係數，可以應用在高功率或高頻率操作的電路。由於這些特點，氮化鎵可用於5G的單晶微波積體電路設計。模型的建立對於電路設計是一個重要的工作，可以減少設計的時間並預測電路的表現。 本研究用Angelov-GaN模型於氮化鎵高電子遷移率電晶體的大訊號模型建立。為了精準地模擬氮化鎵元件的特性，Angelov-GaN模型修改了一些有別於傳統Angelov模型的特性。等效電路模型的參數可以從量測資料包含直流、電容和高頻特性等中萃取。此外，本論文也討論了散射效應及溫度效應，藉由變溫電性量測，可以得到溫度係數。最後把完成參數萃取的模型，利用諧波平衡電路進行功率特性模擬，並與負載牽引量測資料比較。最後的結果兩者是吻合的，因此驗證了此模型的準確性。

GaN HEMTs show high transconductance, high cutoff frequency and good thermal conductivity, so that they are suitable for high-power and high-frequency applications. Because of these advantages, GaN HEMTs can be used in 5G MMIC design. For MMIC designs, the device modeling is one important work for reducing design time and predicting the circuit performance. The device modeling technique of AlGaN/GaN HEMTs is described using Angelov-GaN model for RF and high-power applications. To simulate the GaN device behavior with more accuracy, some modifications have been made in Angelov-GaN model compared to the conventional Angelov model. From measured dc, capacitance and high-frequency characteristics, model parameters are extracted. The model parameter extraction procedures from the dispersion effect and temperature characteristics are also discussed. Linear temperature coefficients are found by the variable-temperature simulation. Good agreements between the measured and simulated data are obtained. The model also exhibits good accuracy and is stable in HB simulations.