紫外光的曝曬及結構性變化對於p型氧化亞錫薄膜電晶體之特性影響

標題:	紫外光的曝曬及結構性變化對於p型氧化亞錫薄膜電晶體之特性影響 Influences of Ultraviolet Exposure and Structural Changes on the Characteristics of p-Type SnO Thin Film Transistors
作者:	何任詮荊鳳德 He, Ren-Chiuan Albert, Chin 電子研究所
關鍵字:	p型氧化亞錫薄膜電晶體;高載子遷移率;紫外光照射;應力效果;高介電常數閘極介電質;薄膜電晶體;p-type SnO TFT;high carrier mobility;UV exposure;strain effect;High K gate dielectric;thin film transistor
公開日期:	2017
URI:	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450151 http://hdl.handle.net/11536/141071
Appears in Collections:	Thesis