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dc.contributor.author鄔晏澤zh_TW
dc.contributor.author曾俊元zh_TW
dc.contributor.authorWu, Yan-zeen_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2018-01-24T07:40:30Z-
dc.date.available2018-01-24T07:40:30Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450212en_US
dc.identifier.urihttp://hdl.handle.net/11536/141314-
dc.language.isoen_USen_US
dc.subject選擇器zh_TW
dc.subject電阻式記憶體zh_TW
dc.subject非線性zh_TW
dc.subject有效讀取區域zh_TW
dc.subject陣列zh_TW
dc.subjectSelectoren_US
dc.subjectRRAMen_US
dc.subjectNonlinearityen_US
dc.subjectRead Marginen_US
dc.subjectArrayen_US
dc.title單層氧化鎂選擇器應用於電阻式記憶體之研究zh_TW
dc.titleSingle-layer Magnesium Oxide Based Selectors for Resistive Switching Memory Applicationsen_US
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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