| 標題: | 單層氧化鎂選擇器應用於電阻式記憶體之研究 Single-layer Magnesium Oxide Based Selectors for Resistive Switching Memory Applications |
| 作者: | 鄔晏澤 曾俊元 Wu, Yan-ze Tseng, Tseung-Yuen 電子研究所 |
| 關鍵字: | 選擇器;電阻式記憶體;非線性;有效讀取區域;陣列;Selector;RRAM;Nonlinearity;Read Margin;Array |
| 公開日期: | 2017 |
| URI: | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450212 http://hdl.handle.net/11536/141314 |
| 顯示於類別： | 畢業論文 |
- 氧化層雙向選擇器於電阻式記憶體之應用 / 楊敦智;曾俊元;Yang, Tun-Chih;Tseng, Tseung-Yuen
- 金屬氧化物選擇器搭配氧化鋯電阻式記憶體之特性研究 / 李承鴻;曾俊元;Lee, Cheng-Hung;Tseng,Tseung-Yuen
- Dependence of Read Margin on Pull-Up Schemes in High-Density One Selector-One Resistor Crossbar Array / Lo, Chun-Li;Hou, Tuo-Hung;Chen, Mei-Chin;Huang, Jiun-Jia
- 利用選擇器串接電阻式記憶體在可撓式基板上製作高密度交錯式記憶體陣列 / 曾奕銘;Tseng, Yi-Ming;侯拓宏;Hou, Tuo-Hung
- Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays / Aluguri, Rakesh;Tseng, Tseung-Yuen
- One bipolar transistor selector - One resistive random access memory device for cross bar memory array / Aluguri, R.;Kumar, D.;Simanjuntak, F. M.;Tseng, T. Y.
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