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dc.contributor.author賴佑承zh_TW
dc.contributor.author成維華zh_TW
dc.contributor.author鄭時龍zh_TW
dc.contributor.authorLai, You-Chengen_US
dc.date.accessioned2018-01-24T07:41:09Z-
dc.date.available2018-01-24T07:41:09Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070451121en_US
dc.identifier.urihttp://hdl.handle.net/11536/141593-
dc.description.abstract本研究的目的,藉由儀器量測氮化鎵和矽功率電晶體之電性特性與參數萃取,並透過建立基本電路的等效電路測試電性特性及說明量測原理,包含了臨界電壓、電流電壓特性曲線、寄生電容電壓特性曲線、閘極電荷、無箝制電感性切換……等等,以提供電路設計的驗證方式,最後使用PSpice電路模擬軟體的內建功率電晶體模型及電路結構進行參數擬合,建立氮化鎵和矽功率電晶體等效電路模型,利用等效電路測試電性特性,和儀器量測結果進行比對驗證,並建構等效電路模型標準作業程序。zh_TW
dc.description.abstractThe purpose of this study is to measure the electrical characteristics and parameter extraction of GaN and Power MOSFETs by an instrument. The equivalent circuit of the basic circuit is used to test the electrical characteristics and explain the measurement theory, including the Threshold voltage, I-V curve, C-V curve, gate charge, unclamped inductive switching and so on. To provide circuit design verification mode, and use PSpice circuit simulation software basic power transistor model and circuit structure. The equivalent circuit model of GaN and Power MOSFETs are established by using the parameters fitting method. The equivalent circuit is used to test the electrical characteristics, and the result is compared with measurements of the instrument. The standard operating procedure of the equivalent circuit model is constructed.en_US
dc.language.isozh_TWen_US
dc.subject矽功率電晶體zh_TW
dc.subject電性測試電路zh_TW
dc.subject參數擬合zh_TW
dc.subject等效電路模型zh_TW
dc.subjectpower transistoren_US
dc.subjectElectrical testen_US
dc.subjectparameter fittingen_US
dc.subjectSpice Modelingen_US
dc.title氮化鎵和矽功率電晶體等效電路模擬 及Spice模型建立zh_TW
dc.titleEquivalent Circuit Simulation and Spice Modeling for GaN and Power MOSFETsen_US
dc.typeThesisen_US
dc.contributor.department機械工程系所zh_TW
Appears in Collections:Thesis