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dc.contributor.author黃昭華zh_TW
dc.contributor.author成維華zh_TW
dc.contributor.author鄭時龍zh_TW
dc.contributor.authorHuang,Chao-Huaen_US
dc.contributor.authorChien,Wei-Huaen_US
dc.contributor.authorJeng,Shyr-Longen_US
dc.date.accessioned2018-01-24T07:41:29Z-
dc.date.available2018-01-24T07:41:29Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070451111en_US
dc.identifier.urihttp://hdl.handle.net/11536/141891-
dc.language.isozh_TWen_US
dc.subject金屬氧化物場效電晶體zh_TW
dc.subject氮化鎵高速電子遷移率場效電晶體zh_TW
dc.subjectMOSFETen_US
dc.subjectGaN HEMTen_US
dc.title金屬氧化物場效電晶體與氮化鎵高速電子遷移率場效電晶體脈衝波測試與分析zh_TW
dc.titleMOSFET and GaN HEMT Pulse Test and Analysisen_US
dc.typeThesisen_US
dc.contributor.department機械工程系所zh_TW
Appears in Collections:Thesis


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