以射頻磁控濺鍍氣相沉積法製備參氫的氧化銦薄膜

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	王義智	zh_TW
dc.contributor.author	吳耀銓	zh_TW
dc.contributor.author	Wang,Yi-Chih	en_US
dc.contributor.author	Wu, Yew-Chung	en_US
dc.date.accessioned	2018-01-24T07:43:18Z	-
dc.date.available	2018-01-24T07:43:18Z	-
dc.date.issued	2016	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070161324	en_US
dc.identifier.uri	http://hdl.handle.net/11536/143305	-
dc.language.iso	zh_TW	en_US
dc.subject	以射頻磁控濺鍍氣相沉積法製備參氫的氧化銦薄膜	zh_TW
dc.subject	The fabrication and characterization of hydrogen doped indium oxide by RF-sputter method	en_US
dc.title	以射頻磁控濺鍍氣相沉積法製備參氫的氧化銦薄膜	zh_TW
dc.title	The fabrication and characterization of hydrogen doped indium oxide by RF-sputter method	en_US
dc.type	Thesis	en_US
dc.contributor.department	工學院半導體材料與製程設備學程	zh_TW
顯示於類別：	畢業論文