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dc.contributor.author范書源zh_TW
dc.contributor.author陳宗麟zh_TW
dc.contributor.authorFan,Sue-Yuanen_US
dc.contributor.authorChen,Tsung-Linen_US
dc.date.accessioned2018-01-24T07:43:19Z-
dc.date.available2018-01-24T07:43:19Z-
dc.date.issued2015en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070161103en_US
dc.identifier.urihttp://hdl.handle.net/11536/143325-
dc.language.isozh_TWen_US
dc.subject離子感測場效電晶體zh_TW
dc.subjectCMOS-MEMSzh_TW
dc.subjectTCADzh_TW
dc.subjecttSMC 0.35μm processzh_TW
dc.subjectISFETen_US
dc.subjectCMOS-MEMSen_US
dc.subjectTCADen_US
dc.subjecttSMC 0.35μm process 2p4men_US
dc.title利用tSMC 0.35μm製程設計背閘極酸鹼離子感測場效電晶體zh_TW
dc.titleUsing tSMC 0.35μm Process to Design Back Side Gate Field Effect Transistors for pHen_US
dc.typeThesisen_US
dc.contributor.department工學院精密與自動化工程學程zh_TW
Appears in Collections:Thesis