利用tSMC 0.35μm製程設計背閘極酸鹼離子感測場效電晶體

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	范書源	zh_TW
dc.contributor.author	陳宗麟	zh_TW
dc.contributor.author	Fan,Sue-Yuan	en_US
dc.contributor.author	Chen,Tsung-Lin	en_US
dc.date.accessioned	2018-01-24T07:43:19Z	-
dc.date.available	2018-01-24T07:43:19Z	-
dc.date.issued	2015	en_US
dc.identifier.uri	http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070161103	en_US
dc.identifier.uri	http://hdl.handle.net/11536/143325	-
dc.language.iso	zh_TW	en_US
dc.subject	離子感測場效電晶體	zh_TW
dc.subject	CMOS-MEMS	zh_TW
dc.subject	TCAD	zh_TW
dc.subject	tSMC 0.35μm process	zh_TW
dc.subject	ISFET	en_US
dc.subject	CMOS-MEMS	en_US
dc.subject	TCAD	en_US
dc.subject	tSMC 0.35μm process 2p4m	en_US
dc.title	利用tSMC 0.35μm製程設計背閘極酸鹼離子感測場效電晶體	zh_TW
dc.title	Using tSMC 0.35μm Process to Design Back Side Gate Field Effect Transistors for pH	en_US
dc.type	Thesis	en_US
dc.contributor.department	工學院精密與自動化工程學程	zh_TW
顯示於類別：	畢業論文