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dc.contributor.authorCheng, Hui-Wenen_US
dc.contributor.authorLi, Yimingen_US
dc.date.accessioned2014-12-08T15:20:12Z-
dc.date.available2014-12-08T15:20:12Z-
dc.date.issued2010en_US
dc.identifier.isbn978-1-4244-9384-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/14344-
dc.identifier.urihttp://dx.doi.org/10.1109/ICSESS.2010.5552445en_US
dc.description.abstractThe random work-function (WK) induced threshold voltage fluctuation (sigma Vth) in 16-nm TiN metal-gate fin-type field effect transistors (FinFETs) is explored and modeled by using an experimentally validated Monte Carlo simulation approach. The influences of metal-grain size and device geometry aspect ratio on the random WK-induced sigma Vth are studied analytically. The results of this study allow us to identify suitable materials for metal gate and to clarify reduction of the sigma Vth owing to WKF. Among four different gate materials, the titanium nitride possesses the smallest sigma Vth due to small size of metal grains.en_US
dc.language.isoen_USen_US
dc.subjectMetal-gateen_US
dc.subjectTiNen_US
dc.subjectRandom work functionen_US
dc.subjectThreshold voltage fluctuationen_US
dc.subjectFinFETen_US
dc.subjectAnalytical expressionen_US
dc.subjectModeling and simulationen_US
dc.titleRandom Work Function Variation Induced Threshold Voltage Fluctuation in 16-nm Bulk FinFET Devices with High-kappa-Metal-Gate Materialen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ICSESS.2010.5552445en_US
dc.identifier.journal2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010)en_US
dc.citation.spage331en_US
dc.citation.epage334en_US
dc.contributor.department傳播研究所zh_TW
dc.contributor.departmentInstitute of Communication Studiesen_US
dc.identifier.wosnumberWOS:000289798800082-
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