Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Liu, Xinke | en_US |
dc.contributor.author | Gu, Hong | en_US |
dc.contributor.author | Li, Kuilong | en_US |
dc.contributor.author | Guo, Lunchun | en_US |
dc.contributor.author | Zhu, Deliang | en_US |
dc.contributor.author | Lu, Youming | en_US |
dc.contributor.author | Wang, Jianfeng | en_US |
dc.contributor.author | Kuo, Hao-Chung | en_US |
dc.contributor.author | Liu, Zhihong | en_US |
dc.contributor.author | Liu, Wenjun | en_US |
dc.contributor.author | Chen, Lin | en_US |
dc.contributor.author | Fang, Jianping | en_US |
dc.contributor.author | Ang, Kah-Wee | en_US |
dc.contributor.author | Xu, Ke | en_US |
dc.contributor.author | Ao, Jin-Ping | en_US |
dc.date.accessioned | 2019-04-03T06:41:58Z | - |
dc.date.available | 2019-04-03T06:41:58Z | - |
dc.date.issued | 2017-09-01 | en_US |
dc.identifier.issn | 2158-3226 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.4999810 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/143857 | - |
dc.description.abstract | This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (similar to 10(4)-10(5) cm(-2)) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (similar to 60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility mu(eff) of similar to 1456 cm(2)V(-1)s(-1). Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaNHEMTsare promising candidate for next generation high power device applications. (C) 2017 Author(s). | en_US |
dc.language.iso | en_US | en_US |
dc.title | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.4999810 | en_US |
dc.identifier.journal | AIP ADVANCES | en_US |
dc.citation.volume | 7 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | 光電工程研究所 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.contributor.department | Institute of EO Enginerring | en_US |
dc.identifier.wosnumber | WOS:000412070600078 | en_US |
dc.citation.woscount | 1 | en_US |
Appears in Collections: | Articles |
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