標題: | High-temperature operation of GaN-based vertical-cavity surface-emitting lasers |
作者: | Chang, Tsu-Chi Kuo, Shiou-Yi Lian, Jhen-Ting Hong, Kuo-Bin Wang, Shing-Chung Lu, Tien-Chang 光電工程學系 Department of Photonics |
公開日期: | 1-十一月-2017 |
摘要: | We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p-i-n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 mu m in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of d lambda(FP)/dT approximate to 0.012nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal. (C) 2017 The Japan Society of Applied Physics |
URI: | http://dx.doi.org/10.7567/APEX.10.112101 http://hdl.handle.net/11536/143883 |
ISSN: | 1882-0778 |
DOI: | 10.7567/APEX.10.112101 |
期刊: | APPLIED PHYSICS EXPRESS |
Volume: | 10 |
顯示於類別: | 期刊論文 |