High-temperature operation of GaN-based vertical-cavity surface-emitting lasers

Abstract

We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) capable of high-temperature operation. The GaN-based VCSELs include double dielectric distributed Bragg reflectors and epitaxially grown p-i-n InGaN multiple-quantum-well active layers initially deposited on c-plane sapphire substrates that are bonded to a silicon substrate with a p-side-down and patterned mirror configuration, allowing effective heat dissipation. GaN-based VCSELs with an emission aperture 10 mu m in diameter were fabricated, and their temperature-dependent lasing characteristics revealed that the VCSELs can endure 350 K, as measured under quasicontinuous-wave operation conditions. The temperature-dependent lasing wavelength shift occurs at a rate of d lambda(FP)/dT approximate to 0.012nm/K. The high-temperature operation of GaN-based VCSELs was attributed to the well-matched gain-mode offset, the p-side-down configuration, and the reduced lateral size of the bottom distributed Bragg reflector with recessed metal. (C) 2017 The Japan Society of Applied Physics