標題: Temperature dependence of the electric and spintronic transport properties of Germanium on glass
作者: Chen, C. H.
Lee, C. W.
Yu, Y. C.
Lee, C. P.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ion beam material modification;Germanium on Insulator;Direct bonding;Spin injection
公開日期: 15-十月-2017
摘要: We present electrical spin injection and detection in p-type Ge channels using Ni/Al2O3/Ge on glass tunneling contacts. The entire structure is integrated on a glass substrate. We investigate the temperature dependence of the Hanle effect in a composite p-type Ge on glass (GeOG), using three-terminal configuration Hanle measurements; from these measurements, we observe spin accumulation up to room temperature. A spin signal of 0.3 V and a spin lifetime of 34 ps are obtained at room temperature. (C) 2017 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.nimb.2017.03.065
http://hdl.handle.net/11536/143947
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2017.03.065
期刊: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
Volume: 409
起始頁: 138
結束頁: 142
顯示於類別:期刊論文