標題: | Temperature dependence of the electric and spintronic transport properties of Germanium on glass |
作者: | Chen, C. H. Lee, C. W. Yu, Y. C. Lee, C. P. 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Ion beam material modification;Germanium on Insulator;Direct bonding;Spin injection |
公開日期: | 15-Oct-2017 |
摘要: | We present electrical spin injection and detection in p-type Ge channels using Ni/Al2O3/Ge on glass tunneling contacts. The entire structure is integrated on a glass substrate. We investigate the temperature dependence of the Hanle effect in a composite p-type Ge on glass (GeOG), using three-terminal configuration Hanle measurements; from these measurements, we observe spin accumulation up to room temperature. A spin signal of 0.3 V and a spin lifetime of 34 ps are obtained at room temperature. (C) 2017 Elsevier B.V. All rights reserved. |
URI: | http://dx.doi.org/10.1016/j.nimb.2017.03.065 http://hdl.handle.net/11536/143947 |
ISSN: | 0168-583X |
DOI: | 10.1016/j.nimb.2017.03.065 |
期刊: | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS |
Volume: | 409 |
起始頁: | 138 |
結束頁: | 142 |
Appears in Collections: | Articles |