Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs

doi:10.1109/LED.2017.2737025

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lee, Ho-Pei	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2018-08-21T05:52:50Z	-
dc.date.available	2018-08-21T05:52:50Z	-
dc.date.issued	2017-10-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2017.2737025	en_US
dc.identifier.uri	http://hdl.handle.net/11536/143994	-
dc.description.abstract	This letter investigates the impact of fin lineedge roughness (Fin-LER) on the intrinsic variation of negative capacitanceFinFETs (NC-FinFETs) by TCAD atomistic simulation coupledwith the Landau-Khalatnikovequation. We report a feedback mechanism stemming from the internal voltage amplification inherent in the negative capacitance FET. This feedback mechanism results in the superior immunity to Fin-LER-induced threshold-voltage and subthreshold-swing variations for NC-FinFETs as compared with the FinFET counterparts. This lettermay provide insights for device/circuit designs using negative capacitance FETs.	en_US
dc.language.iso	en_US	en_US
dc.subject	Variability	en_US
dc.subject	negative capacitance	en_US
dc.subject	FinFET	en_US
dc.subject	Fin-LER	en_US
dc.title	Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2017.2737025	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	38	en_US
dc.citation.spage	1492	en_US
dc.citation.epage	1495	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000413760600035	en_US
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