Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs

Abstract

This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for V-T, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.