標題: Suppressed Fin-LER Induced Variability in Negative Capacitance FinFETs
作者: Lee, Ho-Pei
Su, Pio
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2017
摘要: This work investigates the impact of fin-LER on the subthreshold characteristics of the negative-capacitance FinFETs by TCAD atomistic simulation coupled with the Landau-Khalatnikov equation. Our study indicates that the variability for V-T, SS and DIBL can be suppressed by the negative-capacitance feedback mechanism. The ferroelectric layer exhibits larger gate voltage amplification for the device with more severe short channel effect and vice versa, and explains the superior immunity to LER variation for the negative capacitance FinFETs.
URI: http://hdl.handle.net/11536/146931
ISSN: 2161-4636
期刊: 2017 SILICON NANOELECTRONICS WORKSHOP (SNW)
起始頁: 31
結束頁: 32
Appears in Collections:Conferences Paper