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dc.contributor.authorYang, Chung-Ien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorLin, Sung-Chunen_US
dc.contributor.authorYeh, Cheng-Yenen_US
dc.contributor.authorChang, Chia-Senen_US
dc.contributor.authorTsai, Cheng-Mingen_US
dc.contributor.authorYu, Ming-Changen_US
dc.date.accessioned2018-08-21T05:52:56Z-
dc.date.available2018-08-21T05:52:56Z-
dc.date.issued2017-12-31en_US
dc.identifier.issn0040-6090en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.tsf.2017.08.053en_US
dc.identifier.urihttp://hdl.handle.net/11536/144116-
dc.description.abstractThis work investigates the hot carrier effect in via-contact type amorphous indium gallium zinc oxide thin film transistors with various source/drain materials and structures. According to previous research, the redundant drain electrode plays an important role in hot carrier stress-induced degradation, which leads to carrier-trapping in the etch stop layer between the active layer and the redundant drain electrode. Hot carrier stress has different influences on device characteristics, depending on materials and structure. Hot carrier stress causes more electron trapping in the etch stop layer below the redundant drain electrode in the presence of smaller source/drain metal work function or a longer redundant drain electrode. To further verify the mechanisms of the degradation behavior, the barrier height for Fowler-Nordheim-tunneling is extracted by a fitting charge trapping model. It is found that the barrier height for Fowler-Nordheim-tunneling is different for different source/drain materials.en_US
dc.language.isoen_USen_US
dc.subjectThin film transistoren_US
dc.subjectEtching stop layeren_US
dc.subjectThermal field emission activation energyen_US
dc.subjectHot carrier effecten_US
dc.subjectReliabilityen_US
dc.titleInvestigating degradation behaviors induced by hot carriers in the etch stop layer in amorphous InGaZnO thin film transistors with different electrode materials and structuresen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.tsf.2017.08.053en_US
dc.identifier.journalTHIN SOLID FILMSen_US
dc.citation.volume644en_US
dc.citation.spage45en_US
dc.citation.epage51en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000416041400009en_US
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