Effect of Sputtered AlN Location on the Growth Mechanism of GaN

doi:10.1149/2.0211709jss

標題:	Effect of Sputtered AlN Location on the Growth Mechanism of GaN
作者:	Wu, Pei-Yu Li, Jhen-Hong Hsu, Lung-Hsing Huang, Chia-Yen Cheng, Yuh-Jen Kuo, Hao-Chung Wu, YewChung Sermon 材料科學與工程學系照明與能源光電研究所光電工程學系 Department of Materials Science and Engineering Institute of Lighting and Energy Photonics Department of Photonics
公開日期:	1-Jan-2017
摘要:	Patterned sapphire substrates (PSSs) have been used to enhance the performance of GaN-based light-emitting diodes (LEDs). This performance can be further improved by using an ex situ sputtered AlN nucleation layer. This improvement has been attributed to the reduction of the GaN formation on the sidewall of the cone shape pattern. In this study, four kinds of PSS samples were fabricated to investigate the effect of sputtered AlN location on the growth mechanism of GaN in detail. (c) 2017 The Electrochemical Society. All rights reserved.
URI:	http://dx.doi.org/10.1149/2.0211709jss http://hdl.handle.net/11536/144252
ISSN:	2162-8769
DOI:	10.1149/2.0211709jss
期刊:	ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume:	6
Appears in Collections:	Articles