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dc.contributor.authorWu, Ko-Lien_US
dc.contributor.authorChou, Yien_US
dc.contributor.authorSu, Chang-Chouen_US
dc.contributor.authorYang, Chih-Chaingen_US
dc.contributor.authorLee, Wei-I.en_US
dc.contributor.authorChou, Yi-Chiaen_US
dc.date.accessioned2019-04-03T06:41:31Z-
dc.date.available2019-04-03T06:41:31Z-
dc.date.issued2017-12-20en_US
dc.identifier.issn2045-2322en_US
dc.identifier.urihttp://dx.doi.org/10.1038/s41598-017-17980-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/144261-
dc.description.abstractWe report single crystalline gallium nitride nanowire growth from Ni and Ni-Au catalysts on silicon using hydride vapor phase epitaxy. The growth takes place rapidly; efficiency in time is higher than the conventional nanowire growth in metal-organic chemical vapor deposition and thin film growth in molecular beam epitaxy. The effects of V/III ratio and carrier gas flow on growth are discussed regarding surface polarity and sticking coefficient of molecules. The nanowires of gallium nitride exhibit excellent crystallinity with smooth and straight morphology and uniform orientation. The growth mechanism follows self-assembly from both catalysts, where Au acts as a protection from etching during growth enabling the growth of ultra-long nanowires. The photoluminescence of such nanowires are adjustable by tuning the growth parameters to achieve blue emission. The practical range of parameters for mass production of such high crystal quality and uniformity of nanowires is suggested.en_US
dc.language.isoen_USen_US
dc.titleControlling bottom-up rapid growth of single crystalline gallium nitride nanowires on siliconen_US
dc.typeArticleen_US
dc.identifier.doi10.1038/s41598-017-17980-0en_US
dc.identifier.journalSCIENTIFIC REPORTSen_US
dc.citation.volume7en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000418389000002en_US
dc.citation.woscount2en_US
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