完整後設資料紀錄
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dc.contributor.authorYen, Cheng-Yoen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorTseng, Yu-Chinen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2018-08-21T05:53:06Z-
dc.date.available2018-08-21T05:53:06Z-
dc.date.issued2018-02-25en_US
dc.identifier.issn0925-8388en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jallcom.2017.12.022en_US
dc.identifier.urihttp://hdl.handle.net/11536/144268-
dc.description.abstractThe nano-scale deformation behaviors and indentation-induced fracture features of the (111)-oriented yttrium-stabilized zirconia single crystal (YSZ(111)) were investigated by Berkovich and micro-Vicker indentations, respectively. The load-displacement curves in the Berkovich nano-indentation experiments evidently exhibited indentation-induced single "pop-in" phenomenon during loading, indicating that the nano-scale deformation in the YSZ(111) crystals is due primarily to the activities of dislocation nucleation and propagation. Based on this scenario, the number of nanoindentation-induced dislocation loops giving rise to the pop-in event was estimated to be around 2 x 10(5) with a critical radius of similar to 2 nm. The hardness and Young's modulus of YSZ(111) single crystal obtained by the continuous contact stiffness measurements (CSM) mode were 22.3 +/- 1.1 GPa and 270.6 +/- 8.5 GPa, consistent with those reported previously in the literature. In addition, the fracture toughness of YSZ(111) single crystal was estimated to be about 1.4-1.6 MPa m(1/2). (C) 2017 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectYSZ(111) single crystalen_US
dc.subjectPop-inen_US
dc.subjectNanoindentationen_US
dc.subjectHardnessen_US
dc.subjectFractureen_US
dc.titleThe deformation behavior and fracture toughness of single crystal YSZ(111) by indentationen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jallcom.2017.12.022en_US
dc.identifier.journalJOURNAL OF ALLOYS AND COMPOUNDSen_US
dc.citation.volume735en_US
dc.citation.spage2423en_US
dc.citation.epage2427en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000418518600297en_US
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