1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorWang, Zi-Haoen_US
dc.contributor.authorYang, Chih-Chiangen_US
dc.contributor.authorYu, Hsin-Chiehen_US
dc.contributor.authorYeh, Hsin-Tingen_US
dc.contributor.authorPeng, Yu-Mingen_US
dc.contributor.authorSu, Yan-Kuinen_US
dc.date.accessioned2018-08-21T05:53:07Z-
dc.date.available2018-08-21T05:53:07Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2771404en_US
dc.identifier.urihttp://hdl.handle.net/11536/144292-
dc.description.abstractIn this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/mu m in the dark and under UV light, and the enhanced field enhancement factors (beta) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.en_US
dc.language.isoen_USen_US
dc.subjectAl-doped ZnO nanorods (AZO NRs)en_US
dc.subjectfield emission (FE)en_US
dc.subjecthydrothermalen_US
dc.titleElectron Field Emission Enhancement Based on Al-Doped ZnO Nanorod Arrays With UV Exposureen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2771404en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume65en_US
dc.citation.spage251en_US
dc.citation.epage256en_US
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.identifier.wosnumberWOS:000418753200036en_US
顯示於類別：期刊論文


相關內容
Loading...