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dc.contributor.authorChuang, Pei-Yuen_US
dc.contributor.authorSu, Shu-Hsuanen_US
dc.contributor.authorChong, Cheong-Weien_US
dc.contributor.authorChen, Yi-Fanen_US
dc.contributor.authorChou, Yu-Hengen_US
dc.contributor.authorHuang, Jung-Chun-Andrewen_US
dc.contributor.authorChen, Wei-Chuanen_US
dc.contributor.authorCheng, Cheng-Mawen_US
dc.contributor.authorTsuei, Ku-Dingen_US
dc.contributor.authorWang, Chia-Hsinen_US
dc.contributor.authorYang, Yaw-Wenen_US
dc.contributor.authorLiao, Yen-Faen_US
dc.contributor.authorWeng, Shih-Changen_US
dc.contributor.authorLee, Jyh-Fuen_US
dc.contributor.authorLan, Yi-Kangen_US
dc.contributor.authorChang, Shen-Linen_US
dc.contributor.authorLee, Chi-Hsuanen_US
dc.contributor.authorYang, Chih-Kaien_US
dc.contributor.authorSu, Hai-Linen_US
dc.contributor.authorWu, Yu-Chengen_US
dc.date.accessioned2018-08-21T05:53:08Z-
dc.date.available2018-08-21T05:53:08Z-
dc.date.issued2018-01-01en_US
dc.identifier.issn2046-2069en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c7ra08995cen_US
dc.identifier.urihttp://hdl.handle.net/11536/144318-
dc.description.abstractTuning the Fermi level (EF) in Bi2Te3 topological-insulator (TI) films is demonstrated on controlling the temperature of growth with molecular-beam epitaxy (MBE). Angle-resolved photoemission spectra (ARPES) reveal that EF of Bi2Te3 thin films shifts systematically with the growth temperature (Tg). The key role that a Bi-on-Te(1) (BiTe1) antisite defect plays in the electronic structure is identified through extended X-ray-absorption fine-structure (EXAFS) spectra at the Bi L-3-edge. Calculations of electronic structure support the results of fitting the EXAFS, indicating that the variation of EF is due to the formation and suppression of BiTe1 that is tunable with the growth temperature. Our findings provide not only insight into the correlation between the defect structure and electronic properties but also a simple route to control the intrinsic topological surface states, which could be useful for applications in TIbased advanced electronic and spintronic devices.en_US
dc.language.isoen_USen_US
dc.titleAnti-site defect effect on the electronic structure of a Bi2Te3 topological insulatoren_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c7ra08995cen_US
dc.identifier.journalRSC ADVANCESen_US
dc.citation.volume8en_US
dc.citation.spage423en_US
dc.citation.epage428en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000419187600047en_US
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