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dc.contributor.authorHsu, Wei-Chengen_US
dc.contributor.authorLing, Hong-Shien_US
dc.contributor.authorWang, Shiang-Yuen_US
dc.contributor.authorLee, Chien-Pingen_US
dc.date.accessioned2018-08-21T05:53:09Z-
dc.date.available2018-08-21T05:53:09Z-
dc.date.issued2018-01-08en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.26.000552en_US
dc.identifier.urihttp://hdl.handle.net/11536/144337-
dc.description.abstractA novel method of detection wavelength tuning for surface plasmon coupled quantum well infrared photodetectors (QWIPs) was demonstrated. By changing of the thickness of the top contact layer, the detection wavelength can be adjusted. The displacement of the detection wavelength is related to the effective dielectric constant of the dielectric layers in the device structure. The peak wavelength moves toward longer wavelength as the contact layer thickness decreases. With a proper match of the 2D metal hole array and the QW absorption region, the responsivity can be kept within a reasonable range for samples with different top contact layer thicknesses. (c) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleWavelength tuning of surface plasmon coupled quantum well infrared photodetectorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.26.000552en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume26en_US
dc.citation.spage552en_US
dc.citation.epage558en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000419549600052en_US
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