標題: | Graphdiyne-modified cross-linkable fullerene as an efficient electron-transporting layer in organometal halide perovskite solar cells |
作者: | Li, Meng Wang, Zhao-Kui Kang, Tin Yang, Yingguo Gao, Xingyu Hsu, Chain-Shu Li, Yuliang Liao, Liang-Sheng 應用化學系 Department of Applied Chemistry |
關鍵字: | Perovskite solar cells;Cross-linkable fullerene;Graphdiyne;Face-on orientation |
公開日期: | 1-Jan-2018 |
摘要: | Interface engineering resulting in good contact, enhanced transport capability, and matched energy levels is indispensable and critical for the development of high-performance planar perovskite solar cells (PSCs). Here, we report an excellent electron-transporting layer (ETL) that can simultaneously enhance the stability and efficiency of n-i-p planar PSCs. Large pi-conjugated graphdiyne (GD) was introduced into cross-linkable fullerene [6,6]-phenyl-C61-butyric styryl dendron ester (PCBSD) to improve the film orientation. Raman spectroscopy and 2D grazing incidence X-ray diffraction (GIXRD) measurements revealed that a strong pi-pi stacking interaction occurred between GD and cross-linkable PCBSD (C-PCBSD), generating a face-on stacked composite film. The orientated C-PCBSD: GD films was favorable for the growth and crystallization of the subsequent perovskite films and provided the merits of superior electron mobility, efficient charge extraction and energy-level tailoring. In addition, the thermally annealed C-PCBSD: GD film provided an adhesive film network with sufficient solvent resistance. Consequently, the perovskite devices delivered a power conversion efficiency of 20.19% with obviously improved cell stability. This indicates a potential application of GD-modified cross-linkable fullerene as an ETL in n-i-p structure PSCs. The finding opens a new route to deposit the fullerene films with ordered orientation by 2D materials with large pi-conjugation, and thus to control the subsequent perovskite crystallization. |
URI: | http://dx.doi.org/10.1016/j.nanoen.2017.11.008 http://hdl.handle.net/11536/144359 |
ISSN: | 2211-2855 |
DOI: | 10.1016/j.nanoen.2017.11.008 |
期刊: | NANO ENERGY |
Volume: | 43 |
起始頁: | 47 |
結束頁: | 54 |
Appears in Collections: | Articles |