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dc.contributor.authorChang, Po-Chunen_US
dc.contributor.authorLuc, Quang-Hoen_US
dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorLin, Yen-Kuen_US
dc.contributor.authorWu, Chia-Hsunen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2018-08-21T05:53:11Z-
dc.date.available2018-08-21T05:53:11Z-
dc.date.issued2017-03-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2017.2656180en_US
dc.identifier.urihttp://hdl.handle.net/11536/144375-
dc.description.abstractIn this letter, we report on the impact of a PEALD-AlN interfacial passivation layer (IPL) and an in-situ NH3 post remote-plasma (PRP) treatment onto InGaAs quantum-well MOSFETs with Ti/HfO2/InGaAs gate stack. Transistors with gate lengths down to 80 nm have been fabricated and characterized. Due to the excellent interfacial quality of HfO2/AIN/InGaAs, the subthreshold swing and the peak effective channel mobility have been improved to 93 mV/decade and 4253 cm2/Vs, respectively. The drain current has also shown a 4.6-fold enhancement, to 164mA/mm(I-OFF = 100 nA/mu m DD = 0.5V), compared with the HfO2 control device. The results also show that the HfO2/AIN device exhibits better immunity to short-channel effects (SCEs) than the HfO2 control device. Furthermore, during positive bias temperature instability stress, a smaller V-TH and a lower Gm were observed for the sample with an AIN IPL and NH3 PRP treatment, indicating that it is more reliable than the sample without any IPL or plasma treatment.en_US
dc.language.isoen_USen_US
dc.subjectQuantum-well MOSFET (QW-MOSFET)en_US
dc.subjecthigh-(k) dielectricen_US
dc.subjectAINen_US
dc.subjectplasma-enhanced atomic layer deposition ( PEALD)en_US
dc.subjectinterfacial passivation layer (IPL)en_US
dc.subjectNH3 plasma treatmenten_US
dc.titleInGaAs QW-MOSFET Performance Improvement Using a PEALD-AlN Passivation Layer and an In-Situ NH3 Post Remote-Plasma Treatmenten_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2017.2656180en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume38en_US
dc.citation.spage310en_US
dc.citation.epage313en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000395878000006en_US
Appears in Collections:Articles