標題: Scalable MoS2/graphene hetero-structures grown epitaxially on sapphire substrates for phototransistor applications
作者: Chen, Hsuan-An
Chen, Wei-Chan
Sun, Hsu
Lin, Chien-Chung
Lin, Shih-Yen
影像與生醫光電研究所
Institute of Imaging and Biomedical Photonics
關鍵字: 2D material hetero-structures;van der Waals epitaxy;photo-transistors
公開日期: 1-Feb-2018
摘要: Bi-layer graphene is grown directly on sapphire substrates by using ethane as the precursor without the assistance of a metal catalyst. A growth model of graphene flake formation in the furnace, followed by a complete film growth is also proposed. Using the graphene/sapphire sample as the new substrate, scalable MoS2 films with good layer number controllability can be grown directly on the substrate. After fabricating the MoS2/graphene hetero-structures into bottom-gate photo-transistors, a Dirac point shift is observed for the device under the light irradiation condition, which is attributed to the extraction of photo-excited electrons in the MoS2 layer to the graphene channel. The photo-voltaic response observed for the photo-transistors may provide a potential application of the 2D material hetero-structure in thin-film solar cells.
URI: http://dx.doi.org/10.1088/1361-6641/aaa3b7
http://hdl.handle.net/11536/144385
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aaa3b7
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 33
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