Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply

doi:10.1364/OE.26.00A110

標題:	Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: reply
作者:	Lee, Ya-Ju Yang, Zu-Po Chen, Pin-Guang Hsieh, Yung-An Yao, Yung-Chi Liao, Ming-Han Lee, Min-Hung Wang, Mei-Tan Hwang, Jung-Min 光電系統研究所 Institute of Photonic System
公開日期:	22-一月-2018
摘要:	We present some comments to the paper "Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors: comment" [Opt. Express 22, A1589 (2014)]. (C) 2017 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
URI:	http://dx.doi.org/10.1364/OE.26.00A110 http://hdl.handle.net/11536/144392
ISSN:	1094-4087
DOI:	10.1364/OE.26.00A110
期刊:	OPTICS EXPRESS
Volume:	26
顯示於類別：	期刊論文