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dc.contributor.authorYang, Chung-Ien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiao, Po-Yungen_US
dc.contributor.authorChen, Bo-Weien_US
dc.contributor.authorChou, Wu-Chingen_US
dc.contributor.authorChen, Guan-Fuen_US
dc.contributor.authorHuang, Shin-Pingen_US
dc.contributor.authorZheng, Yu-Zheen_US
dc.contributor.authorWang, Yu-Xuanen_US
dc.contributor.authorLiu, Hsi-Wenen_US
dc.contributor.authorLin, Chien-Yuen_US
dc.contributor.authorLin, Yu-Shanen_US
dc.contributor.authorLu, Ying-Hsinen_US
dc.contributor.authorZhang, Shengdongen_US
dc.date.accessioned2018-08-21T05:53:13Z-
dc.date.available2018-08-21T05:53:13Z-
dc.date.issued2018-02-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2017.2786144en_US
dc.identifier.urihttp://hdl.handle.net/11536/144405-
dc.description.abstractThis paper utilizes electrical analyses and a study of physical mechanisms to investigate metal gate structure-dependent performance in amorphous InGaZnO (a-IGZO) thin-film transistors. The effects of different shielding areas between the IGZO layer and metal gate are investigated. In devices with shorter metal gate lengths, an abnormal rise in capacitance at the off-state in capacitance-voltage (C-V) characteristic curves can be observed. This can be attributed to the stronger electric field induced by the edge of the metal gate under bias sweep when the metal gate length is shorter than the IGZO layer length. Light illumination measurements indicate a negative shift in threshold voltage and an increase in subthreshold-leakage current regardless of relative metal gate length. Moreover, negative threshold voltage shift becomes more severe with a more obvious hump in C-V characteristic curves under back-light illumination of a shorter width device, a phenomenon which has been verified by simulation.en_US
dc.language.isoen_USen_US
dc.subjectBottom gate thin-film transistors (TFTs)en_US
dc.subjectilluminationen_US
dc.subjectindium gallium zinc oxide (IGZO)en_US
dc.subjectmetal gateen_US
dc.titleCombined Effects of Light Illumination and Various Bottom Gate Length on the Instability of Via-Contact-Type Amorphous InGaZnO Thin-Film Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2017.2786144en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume65en_US
dc.citation.spage533en_US
dc.citation.epage536en_US
dc.contributor.department电子物理学系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000423124500023en_US
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