完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chung, Chris Chun-Chih | en_US |
dc.contributor.author | Shen, Chiuan-Huei | en_US |
dc.contributor.author | Lin, Jer-Yi | en_US |
dc.contributor.author | Chin, Chun-Chieh | en_US |
dc.contributor.author | Chao, Tien-Sheng | en_US |
dc.date.accessioned | 2018-08-21T05:53:13Z | - |
dc.date.available | 2018-08-21T05:53:13Z | - |
dc.date.issued | 2018-02-01 | en_US |
dc.identifier.issn | 0018-9383 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/TED.2017.2780851 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/144407 | - |
dc.description.abstract | We had successfully suspended the vertically stacked cantilever (VSC) nanowire by two approaches: 1) inserting a SiN layer as reinforcement to sustain the gate-stack thermal budget and 2) adopting high-k metal gate low-temperature process and realizing gate-all-around structure, which shows better subthreshold characteristics. Feasibility of improving current level within the same footprint and without degrading subthreshold performance is demonstrated. Series resistance limit is pointed out as a bottle neck for current increment with respect to layers of channels. Further investigation of reducing the series resistance of VSC nanowire is needed for any future circuit integration. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Cantilever | en_US |
dc.subject | high-k metal gate (HKMG) | en_US |
dc.subject | junctionless | en_US |
dc.subject | nanowire | en_US |
dc.subject | series resistance | en_US |
dc.subject | vertically stacked | en_US |
dc.title | Vertically Stacked Cantilever n-Type Poly-Si Junctionless Nanowire Transistor and Its Series Resistance Limit | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/TED.2017.2780851 | en_US |
dc.identifier.journal | IEEE TRANSACTIONS ON ELECTRON DEVICES | en_US |
dc.citation.volume | 65 | en_US |
dc.citation.spage | 756 | en_US |
dc.citation.epage | 762 | en_US |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000423124500056 | en_US |
顯示於類別: | 期刊論文 |