標題: Comparison Between High-Holding-Voltage SCR and Stacked Low-Voltage Devices for ESD Protection in High-Voltage Applications
作者: Dai, Chia-Tsen
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);latchup;silicon-controlled rectifier (SCR)
公開日期: 1-Feb-2018
摘要: The modified silicon-controlled rectifier (SCR) fabricated in a 0.25-mu m high-voltage (HV) bipolar-CMOS-DMOS (BCD) technology has been proposed to seek for both effective electrostatic discharge (ESD) protection and latchup immunity. Experimental results show that one of the proposed SCRs has a high holding voltage of up to similar to 30 V in the 100-ns transmission line pulsing measurement results. However, through the experimental verification by using the transient latchup test, the holding voltage of such proposed device decreases to similar to 20 V. It is due to the increased bipolar junction transistor current gains of the SCR path induced by the Joule-heating effect in the long-term measurement. For 20-V circuit applications, the ESD robustness of the proposed SCR with a holding voltage of similar to 20 V is lower than that of stacked low-voltage p-type MOS in the previous studies. Developing special modification of such HV devices is inefficient to achieve both effective ESD protection and latchup-free design in this 0.25-mu m HV BCD technology.
URI: http://dx.doi.org/10.1109/TED.2017.2785121
http://hdl.handle.net/11536/144408
ISSN: 0018-9383
DOI: 10.1109/TED.2017.2785121
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 65
起始頁: 798
結束頁: 802
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