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dc.contributor.authorHuang, Yu-Mingen_US
dc.contributor.authorChang, Hsie-Chiaen_US
dc.contributor.authorLi, Hsiang-Pangen_US
dc.date.accessioned2018-08-21T05:53:14Z-
dc.date.available2018-08-21T05:53:14Z-
dc.date.issued2017-10-01en_US
dc.identifier.issn0916-8516en_US
dc.identifier.urihttp://dx.doi.org/10.1587/transcom.2016EBP3307en_US
dc.identifier.urihttp://hdl.handle.net/11536/144425-
dc.description.abstractIn this paper, extended polar codes based on re-polarization technique are proposed. The presented schemes extend a conventional polar code of length N to length N + q, which stand in contrast to known length-compatible schemes such as puncturing and shortening techniques that reduce the length from N to N q. For certain specific lengths, the waterfall region performance of our extended polar code is superior to that of other length-compatible polar codes. It provides better reliability and reduces the management overhead in several storage devices and communications systems. In essence, extended polar codes are created by re-polarizing the q least reliable nonfrozen bit-channels with the help of q additional frozen bit-channels. It is proved that this re-polarization enhances the reliability of these bits. Moreover, the extended schemes can be not only modified to improve decoding performance, but generalized as a m-stage scheme to improve throughput significantly. With parallel operation, the throughput is improved around 2(m-1) times when q is small. Compared to a shortened polar code with length 1536, the encoding and decoding complexities of an extended polar code are only 50% and 60.5%, respectively.en_US
dc.language.isoen_USen_US
dc.subjectpolar codesen_US
dc.subjectlength-compatibleen_US
dc.subjectrate-compatibleen_US
dc.subjectlength-adaptationen_US
dc.subjectextendingen_US
dc.titleRe-Polarization Processing in Extended Polar Codesen_US
dc.typeArticleen_US
dc.identifier.doi10.1587/transcom.2016EBP3307en_US
dc.identifier.journalIEICE TRANSACTIONS ON COMMUNICATIONSen_US
dc.citation.volumeE100Ben_US
dc.citation.spage1765en_US
dc.citation.epage1777en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000423263600008en_US
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