標題: AlGaN/GaN MIS-HEMTs With High Quality ALD-Al2O3 Gate Dielectric Using Water and Remote Oxygen Plasma As Oxidants
作者: Wang, Huan-Chung
Hsieh, Ting-En
Lin, Yueh-Chin
Luc, Quang Ho
Liu, Shih-Chien
Wu, Chia-Hsun
Dee, Chang Fu
Majlis, Burhanuddin Yeop
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: AlGaN/GaN;MIS-HEMT;Al2O3;PEALD;oxygen plasma
公開日期: 1-Dec-2018
摘要: We demonstrate the electrical performances of AlGaN/GaN metal-insulator-semiconductor-high electron mobility transistors (MIS-HEMTs) with high quality Al2O3 gate dielectric deposited by plasma enhanced atomic layer deposition using both H2O and remote O-2 plasma as oxygen sources. Excellent gate-dielectric/GaN interface and Al2O3 film quality were obtained, resulting in a very small threshold voltage hysteresis and a low interface trap density. The MIS-HEMT device exhibited high on/off current ratio of similar to 10(10), steep subthreshold slope, small gate leakage current, low dynamic on-resistance degradation, and effectively current collapse suppression. These results indicate that incorporating remote O-2 plasma in the ALD-Al2O3 deposition process is an effective and simple way to provide high quality gate dielectric for the GaN MIS-HEMTs production.
URI: http://dx.doi.org/10.1109/JEDS.2017.2779172
http://hdl.handle.net/11536/144440
ISSN: 2168-6734
DOI: 10.1109/JEDS.2017.2779172
期刊: IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
Volume: 6
起始頁: 110
結束頁: 115
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