标题: | The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors |
作者: | Wang, Kuan-Hsun Zan, Hsiao-Wen Soppera, Olivier 光电工程学系 Department of Photonics |
关键字: | sol-gel;IGZO;DUV;photo-patterning;zinc loss |
公开日期: | 1-三月-2018 |
摘要: | We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm(2) V-1 s (-1) when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 degrees C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs. |
URI: | http://dx.doi.org/10.1088/1361-6641/aaa611 http://hdl.handle.net/11536/144455 |
ISSN: | 0268-1242 |
DOI: | 10.1088/1361-6641/aaa611 |
期刊: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
Volume: | 33 |
显示于类别: | Articles |