標題: The zinc-loss effect and mobility enhancement of DUV-patterned sol-gel IGZO thin-film transistors
作者: Wang, Kuan-Hsun
Zan, Hsiao-Wen
Soppera, Olivier
光電工程學系
Department of Photonics
關鍵字: sol-gel;IGZO;DUV;photo-patterning;zinc loss
公開日期: 1-三月-2018
摘要: We investigate the composition of the DUV-patterned sol-gel indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) and observe a significant zinc loss effect during developing when the DUV exposure is insufficient. The zinc loss, however, is beneficial for increasing the mobility. Reducing zinc to indium composition ratio from 0.5 to 0.02 can effectively increase mobility from 0.27 to 7.30 cm(2) V-1 s (-1) when the gallium to indium ratio is fixed as 0.25 and the post annealing process is fixed as 300 degrees C for 2 h. On the other hand, an IGO TFT fails to deliver a uniform film and a reproducible TFT performance, revealing the critical role of zinc in forming homogeneous IGZO TFTs.
URI: http://dx.doi.org/10.1088/1361-6641/aaa611
http://hdl.handle.net/11536/144455
ISSN: 0268-1242
DOI: 10.1088/1361-6641/aaa611
期刊: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume: 33
顯示於類別:期刊論文