Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-mu m High-Voltage CMOS Process

doi:10.1109/JLT.2017.2779490

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wu, Dai-Rong	en_US
dc.contributor.author	Tsai, Chia-Ming	en_US
dc.contributor.author	Huang, Yi-Hsiang	en_US
dc.contributor.author	Lin, Sheng-Di	en_US
dc.date.accessioned	2018-08-21T05:53:19Z	-
dc.date.available	2018-08-21T05:53:19Z	-
dc.date.issued	2018-02-01	en_US
dc.identifier.issn	0733-8724	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/JLT.2017.2779490	en_US
dc.identifier.uri	http://hdl.handle.net/11536/144534	-
dc.description.abstract	Crosstalk between single-photon avalanche diodes (SPADs) fabricated by the standard CMOS process is extensively investigated. The dependence of device structure, device-to-device distance, and bias voltage on crosstalk has been experimentally studied. Our work reveals that direct-path optical crosstalk dominates in these CMOS SPADs, which is also confirmed with the first time-correlated crosstalk measurement. This work is valuable for SPAD array design and optimization in CMOS technology.	en_US
dc.language.iso	en_US	en_US
dc.subject	Breakdown flash	en_US
dc.subject	CMOS technology	en_US
dc.subject	crosstalk	en_US
dc.subject	single-photon avalanche diodes	en_US
dc.title	Crosstalk Between Single-Photon Avalanche Diodes in a 0.18-mu m High-Voltage CMOS Process	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/JLT.2017.2779490	en_US
dc.identifier.journal	JOURNAL OF LIGHTWAVE TECHNOLOGY	en_US
dc.citation.volume	36	en_US
dc.citation.spage	833	en_US
dc.citation.epage	837	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000425207100025	en_US
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