標題: Low-temperature sol-gel oxide TFT with a fluoropolymer dielectric to enhance the effective mobility at low operation voltage
作者: Yu, Shang-Yu
Wang, Kuan-Hsun
Zan, Hsiao-Wen
Soppera, Olivier
光電工程學系
Department of Photonics
公開日期: 1-Jun-2017
摘要: In this article, we propose a solution-processed high-performance amorphous indium-zinc oxide (a-IZO) thin-film transistor (TFT) gated with a fluoropolymer dielectric. Compared with a conventional IZO TFT with a silicon nitride dielectric, a fluoropolymer dielectric effectively reduces the operation voltage to less than 3V and greatly increases the effective mobility 40-fold. We suggest that the dipole layer formed at the dielectric surface facilitates electron accumulation and induces the electric double-layer effect. The dipole-induced hysteresis effect is also investigated. (C) 2017 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.56.060303
http://hdl.handle.net/11536/144537
ISSN: 0021-4922
DOI: 10.7567/JJAP.56.060303
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 56
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