標題: Electron transport in the two-dimensional channel material - zinc oxide nanoflake
作者: Lai, Jian-Jhong
Jian, Dunliang
Lin, Yen-Fu
Ku, Ming-Ming
Jian, Wen-Bin
電子物理學系
Department of Electrophysics
關鍵字: ZnO;Nanoflake;Two-dimensional hopping transport;Two-dimensional semiconductor;Variable range hopping
公開日期: 1-Mar-2018
摘要: ZnO nanoflakes of 3-5 mu m in lateral size and 15-20 nm in thickness are synthesized. The nanoflakes are used to make back-gated transistor devices. Electron transport in the ZnO nanoflake channel between source and drain electrodes are investigated. In the beginning, we argue and determine that electrons are in a two-dimensional system. We then apply Mott's two-dimensional variable range hopping model to analyze temperature and electric field dependences of resistivity. The disorder parameter, localization length, hopping distance, and hopping energy of the electron system in ZnO nanoflakes are obtained and, additionally, their temperature behaviors and dependences on room-temperature resistivity are presented. On the other hand, the basic transfer characteristics of the channel material are carried out, as well, and the carrier concentration, the mobility, and the Fermi wavelength of two-dimensional ZnO nanoflakes are estimated.
URI: http://dx.doi.org/10.1016/j.physb.2017.03.041
http://hdl.handle.net/11536/144570
ISSN: 0921-4526
DOI: 10.1016/j.physb.2017.03.041
期刊: PHYSICA B-CONDENSED MATTER
Volume: 532
起始頁: 135
結束頁: 138
Appears in Collections:Articles