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dc.contributor.authorHsieh, Gen-Wenen_US
dc.contributor.authorLin, Zong-Rongen_US
dc.contributor.authorHung, Chun-Yien_US
dc.contributor.authorLin, Sheng-Yuen_US
dc.contributor.authorYang, Chii-Rongen_US
dc.date.accessioned2018-08-21T05:53:21Z-
dc.date.available2018-08-21T05:53:21Z-
dc.date.issued2018-03-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2017.12.024en_US
dc.identifier.urihttp://hdl.handle.net/11536/144578-
dc.description.abstractWe investigate multifunctional graphene nanostructures as charge carrier mobility enablers and moisture and air barrier films for organic-based polythiophene field effect transistors. Primary results show that a tiny amount of graphene flakes blended in the polythiophene active channel could reach a ten-fold increase in effective transistor mobility. Moreover, densely packed honeycomb graphene for efficient moisture and air shielding is firstly applied on organic active channels without any supporting polymer, resulting in mild mobility degradation in ambient environment with respect to unprotected polythiophene devices. Thus, hybrid graphene-polythiophene blend transistors laminated with graphene passivation layers exhibit significantly superior and prolonged performances over 1400 h, whereas the hybrid devices without graphene passivation become unswitchable in 600 h. Moreover, their low processing temperature (< 150 degrees C), solution processability, and flexibility of both graphene and polythiophene makes them a highly promising means for next-generation organic field effect transistors.en_US
dc.language.isoen_USen_US
dc.subjectAir stabilityen_US
dc.subjectCharge carrier mobilityen_US
dc.subjectField effect transistoren_US
dc.subjectGrapheneen_US
dc.subjectPolythiopheneen_US
dc.titleGraphene-induced enhancement of charge carrier mobility and air stability in organic polythiophene field effect transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2017.12.024en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume54en_US
dc.citation.spage27en_US
dc.citation.epage33en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000425977600005en_US
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