標題: Design of Power-Rail ESD Clamp With Dynamic Timing-Voltage Detection Against False Trigger During Fast Power-ON Events
作者: Chen, Jie-Ting
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Diode string;electrostatic discharge (ESD);ESD protection;power-rail ESD clamp circuit
公開日期: 1-三月-2018
摘要: The RC-based power-rail electrostatic discharge (ESD) clamp with nMOS of large size has been widely utilized to enhance the ESD robustness of CMOS integrated circuits. However, such circuit design that only detects the rising time of ESD pulse may be accidentally triggered in some conditions, such as fast power-ON, hot-plug, and envelope tracking applications. In this paper, a new power-rail ESD clamp circuit with transient and voltage detection function has been proposed and implemented in a 0.18-mu m 1.8-V CMOS technology. The measurement results from the silicon chip have demonstrated that the new proposed power-rail ESD clamp circuit with adjustable minimum starting voltage (V-starting) can achieve good ESD robustness and avoid triggering under fast power-ON condition. In addition, the proposed circuit has a low standby leakage current of 270 nA at 125 degrees C under normal power-ON condition.
URI: http://dx.doi.org/10.1109/TED.2018.2789819
http://hdl.handle.net/11536/144582
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2789819
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 65
起始頁: 838
結束頁: 846
顯示於類別:期刊論文